Electrical Properties of Vanadium Sesquioxide Thin Films
Electrically induced resistive switching phenomena in materials with metal-insulator-transitions (MIT) are of high interest due to the prospect of applications in memory devices. Several vanadium oxides exhibit reversible MIT's which can be initiated by heating, pressure, strain, or short electrical or light pulses. In this work, we will present the results of metal-oxide-metal structure device prepared by Sputtering DC. The effects of crystallinity were analyzed by x-ray diffraction. In addition, the electrical properties of Au/V2O3/Au thin films were investigated.